基于红外成像的瓷支柱绝缘子发热规律研究  被引量:23

Study of Porcelain Post Insulator Heating Law Based on Infrared Imaging

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作  者:律方成[1] 马建桥[1] 汪佛池[1] 张文静[1] 闫康[1] 

机构地区:[1]华北电力大学河北省输变电设备安全防御重点实验室,保定071003

出  处:《电工技术学报》2013年第12期130-135,共6页Transactions of China Electrotechnical Society

基  金:国家重点研究基础发展计划(973计划)(2009CB724508);中央高校基本科研业务费专项(13MS71;13ZD14)资助项目

摘  要:为分析瓷支柱绝缘子异常发热的主导诱因,在实验室内,对局部发热明显的试品在未经处理、干燥与浸泡处理等三种不同状态下分别施加20kV工频电压,记录不同时长下的红外热像分布图和泄漏电流。研究表明:该试品发热的主要原因为水分子通过裂纹侵入瓷体,在电场作用下产生转向极化所致。在未经处理、浸泡处理后,试品异常发热区域最热点温度和温升变化可分为上升、下降、小幅振荡及稳定等四个阶段。在浸泡处理后,试品发热区域最热点温度和温升同未经处理、干燥两种状态下的数据相比,数值绝对值增加明显。浸泡处理后的泄漏电流变化同最热点温度变化过程基本一致,但上升、下降、小幅振荡过程呈现出持续时长短、拐点出现时间早的特点。In order to analyze the dominant cause of porcelain post insulator abnormal local fevering, in the experimental laboratory, 20kV power frequency voltage was applied to the test sample which had apparent local heating phenomenon in the untreated, dried and soaked t states, time-varying infrared thermal image and leakage current was recorded. It is found that the main cause of the test object exception generating is that water molecules penetrated through the cracks into the ceramic body, the molecules were polarized under the electric field force, hottest-spot temperature of the test sample can be divided into four procedures: ascending, descending, oscillating and stabilizing. In the immersion state, compared to the data under the original and dried states, the absolute value increased significantly. In the soaked state, leakage current tendency chart is basically same to the time-varying hottest temperature chart, but the up, down and slight concussion stage showed the features that the short during time and earlier number inflection point.

关 键 词:瓷支柱绝缘子 微裂纹 红外热像 泄漏电流 发热规律 

分 类 号:TM855[电气工程—高电压与绝缘技术]

 

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