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机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051
出 处:《半导体技术》2014年第2期98-102,共5页Semiconductor Technology
摘 要:采用混合集成电路工艺,设计了一款小尺寸限幅低噪声放大器(LNA)。优化了限幅电路设计,明显缩小了电路,本积。低噪声放大器采用负反馈结构,以改善增益平坦度。采用平衡式结构,提高限幅器的功率容量和放大器的1dB压缩点输出功率(P-1dB)。设计制作了Lange电桥,作为平衡式限幅放大器的输出电桥。该放大器工作电压5V,电流15lmA,测试结果显示,在频带2.7~3.0GHz内,噪声系数小于1.5dB,小信号功率增益大于36dB,增益平坦度小于0.6dB,输入输出驻波比小于1.3,P-1dB大于13dBm。该限幅放大器能够承受脉冲功率300W、脉宽300txs和占空比为30%的信号,外形尺寸为27InHI×18mm×5mm。Based on the hybrid integrated circuit technology, a kind of the miniaturized limiter low noise amplifier (LNA) was presented. Through the optimized design of the limiter circuit, the limiter's size was reduced obviously. The negative feedback structure was adopted in the LNA to improve the gain flatness. The balanced structure was used to enhance the power tolerance of the limiter and ensure the output power at 1 dB compression point (P-1dB) of the LNA. The Lange coupler was designed and fabricated as the output coupler. Within the bandwidth of the 2.7-3.0 GHz, the designed limiter LNA with 5 V supply has a noise figure below 1.5 dB, and the small signal gain is higher than 36 dB with a gain flatness below 0. 6 dB. The limiter LNA provides input and output VSWR below 1.3, an output power at 1 dB compression point of more than 13 dBm, and an outline dimension of 27 mm×18 mm×5 mm. The limiter LNA can work in 300 W pulse power with a pulse width of 300 μs and a duty ratio of 30%.
关 键 词:小型化 平衡式结构 限幅器 低噪声放大器(LNA) 混合集成
分 类 号:TN722.3[电子电信—电路与系统]
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