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作 者:高刘正 邵铮铮[1] 朱志武[2] 黄任[1] 常胜利[1]
机构地区:[1]国防科学技术大学理学院,湖南长沙410073 [2]国防科学技术大学光电科学与工程学院,湖南长沙410073
出 处:《中国激光》2013年第B12期55-59,共5页Chinese Journal of Lasers
摘 要:采用扫描电子显微镜和显微拉曼光谱仪研究了受脉冲激光损伤的CCD的形貌和光谱特性。在损伤表面上得到CCD各层的形貌,比较出不同层受激光损伤的先后次序,观察到感光区附近遮光层和多晶硅电极的破坏,研究深入到单个像素尺度;在截面上测得损伤区内部硅材料拉曼光谱特征峰红移,判定内部硅材料发生熔融,并造成表面多晶硅电极和基底短路,解释了CCD受皮秒激光热损伤完全失效的机理。The morpha and spectral character of damaged CCD, which has been irradiated by picosecond pulsed laser, are studied by using scanning electron microscope and micro-Raman spectrometer. Morphological damaged images of different layers are observed on the surface of CCD. The damage sequence is decided by comparing different layers: conditions with a scale as small as a single pixel. The damage status of W-shield and poly-Si around one pixel is observed. On the cross section, the red-shift of Raman spectrum of bulk silicon material is measured and it means that bulk silicon melts, which brings a short-circuit between surface poly-Si electrode and substrate. The short-circuit explains the thermal mechanism of complete failure.
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