CMOS工艺APS阵列的近红外响应及参数分析  

Parameters analysis and near-infrared response of CMOS APS array

作　　者：王庆祥[1] 孟丽娅[1] 刘泽东[1] 王成[1] 

机构地区：[1]重庆大学光电技术及系统教育部重点实验室,重庆400044

出　　处：《激光与红外》2014年第2期172-174,共3页Laser & Infrared

基　　金：国家自然科学基金项目(No.61071043);重庆市自然科学基金项目(CSTC;2010BB0075)资助

摘　　要：采用DevEdit3D构建了5×5的像元结构模型,在基于Lnuminous 1μm的近红外的照射下,利用Silvaco TCAD仿真了像元中心距、阱深、衬底掺杂浓度等工艺参数对其电荷收集量和像元串扰程度的影响。仿真测得电荷收集量随像元中心距和阱深的增大而增大,随衬底掺杂浓度的增大而减小;像元间串扰程度与像元中心距的大小以及阱深的深度成反比,与衬底掺杂浓度的大小成正比。最后对以上影响的成因进行了理论分析。The 5 ＆#215;5 CMOS array is designed with Devedit 3D.Based on the near-infrared （1μm）from Lnuminous,theeffect of center distance,substrate doping and N-well depth on the crosstalk and collected charges is simulated withSilvaco TCAD.The simulation shows that the collected charges increase with the increase of center distance and N-well depth,and it decreases with the increase of substrate doping.The crosstalk is inversely proportional to center dis-tance and the well depth,and it is proportional to the substrate doping concentration.Finally the causes of the aboveeffects are theoretically analyzed.

关 键 词：像元中心距 阱深 衬底掺杂浓度 

分 类 号：TN215[电子电信—物理电子学]