PVK/Alq_3复合薄膜的磁电阻效应  

Magnetoresistance Effect of PVK/Alq_3 Composite Films

作　　者：杨甜甜[1] 刘昊[1] 胡权[1] 王伟[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《微纳电子技术》2014年第1期30-33,共4页Micronanoelectronic Technology

基　　金：河北省自然科学基金资助项目(F2012202075)

摘　　要：使用匀胶法在ITO衬底上制备不同质量配比的聚乙烯基咔唑(PVK)/8-羟基喹啉铝(Alq3)复合薄膜,分别利用AFM和四探针法测量分析薄膜的成膜性能、表面形貌与低磁场强度电阻特性,研究分析在磁场下有机薄膜电阻效应的机理。研究发现PVK和Alq3的质量配比为4∶1时,PVK/Alq3材料成膜性好,薄膜表面均匀,电阻变化率达到-30.58%。分析其机理是外加磁场增强了薄膜内载流子的自旋极化,从而增加了极化子和单线态激子的形成概率。形成概率的增加提高了薄膜内载流子的迁移率,进而减小了薄膜的电阻值,导致了薄膜的电阻效应。Poly （vinylcarbazole） （PVK）/8-hydroxyquinoline aluminum （Alq3） composite films with different mass ratios were prepared on the indium tin oxid （IT（）） substrate through the spin- coating method. The film-forming property, surface morphology and resistance characteristics at the low magnetic field intensity were tested and analyzed by the AFM and four-point probe method. The mechanism of the organic film resistance effect under the magnetic field was studied and analyzed. The results show that when the mass ratio of PVK and Alq3 is 4 ： 1, the film-for- ming property of PVK/Alq3 composite films is good, the thin film surface is uniform, and the resis- tance change rate reaches -30.58O/oo. The mechanism is that the applied magnetic field enhances the spin polarization of carriers in the film, therefore the formation probability of the polaron and singlet exciton in composite films are increased. The increase of the formation probability improves the carrier mobility in the thin film, thus reduces the resistance of the thin film, which resuits in the resistance effect of the thin film.

关 键 词：聚乙烯基咔唑(PVK) 8-羟基喹啉铝(Alq3) 迁移率 电阻效应 氧化铟锡(ITO) 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]