用于GPS卫星导航系统的低噪声放大器设计  

Design of low noise amplifier for GPS receiver

作　　者：项勇[1] 周仁杰[1] 段炼[1] 甘业兵[1,2,3] 马成炎[1,2,3] 叶甜春[1] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]杭州中科微电子有限公司,浙江杭州310053 [3]嘉兴联星微电子有限公司,浙江嘉兴314000

出　　处：《中南大学学报（自然科学版）》2013年第11期4513-4519,共7页Journal of Central South University:Science and Technology

基　　金：嘉兴市科技计划项目(2012BZ5006);嘉兴市南湖区科技计划项目(2011QG06);国家"核高基"重大专项(2009ZX01031-002-008)

摘　　要：采用0.18μm SiGe BiCMOS工艺设计一个用于GPS卫星导航系统射频前端电路的低噪声放大器。该低噪声放大器采用BiFET(Bipolar-MOSFET)Cascode结构可以同时实现极低噪声和高线性度。采用异质结晶体管(heterogenous bipolar transistor,HBT)作为输入管以提供低噪声性能,Cascode级采用MOSFET管来提高线性度。与传统的全HBT管或全MOSFET管相比,这种混合结构能更方便地实现噪声、增益和线性度之间的折中设计。当该低噪声放大器在2.85 V电源电压下工作时,消耗3.7 mA电流,提供19 dB功率增益,噪声系数为0.9 dB,输入1 dB压缩点为0.065 mW。The design and implementation of a low noise amplifier （LNA） based on 0.18 ~tm SiGe BiCMOS process for the RF circuits in GPS receivers was presented. It uses a BiFET Cascode structure and achieves ultra low noise and considerable linearity simultaneously. The heterogenous bipolar transistor （HBT） input transistor provides very low noise and a cascode MOSFET enhances the linearity. With the use of this mixed approach, it is easier to realize the trade-off between gain, noise figure, linearity and power consumption than the conventional full-HBT or full-MOSFET structures. The LNA consumes total 3.7 mA current under 2.85 V supply voltage and results in a simulated noise fignre（NF） of 0.9 dB, a power gain of 19 dB, a input 1 dB compression power（ICP1） of 0.065 mW.

关 键 词：低噪声放大器 噪声系数 BiFETCascode结构 线性度 

分 类 号：TN772[电子电信—电路与系统]