基于1.5GHz多次谐波超短脉冲门控InGaAs/InP雪崩光电二极管的近红外单光子探测技术研究  

Study of 1.5GHz Harmonics Ultrashort Pulse Gated InGaAs/InP Avalanche Photodiode Single-Photon Detection

作　　者：黄建华[1] 吴光[1] 曾和平[1] 

机构地区：[1]华东师范大学精密光谱科学与技术国家重点实验室,上海200062

出　　处：《光学学报》2014年第2期21-25,共5页Acta Optica Sinica

基　　金：国家自然科学基金(61127014;11374105)

摘　　要：提出了一种高速门控盖格模式的铟镓砷/铟磷雪崩光电二极管(InGaAs/InP APD)单光子探测技术。将1.5GHz多次谐波超短脉冲加载到InGaAs/InP APD上,盖革模式下的光生雪崩信号埋藏在短脉冲充放电形成的噪声中,采用700MHz低通滤波器实现了50.6dB的噪声抑制比,有效地提取出了雪崩信号。通过半导体制冷,使InGaAs/InP APD工作在-30℃,1.5GHz短脉冲驱动下的InGaAs/InP APD在1550nm的探测效率为35%,暗计数率为每门6.4×10-5,超过了单纯使用1.5GHz正弦门的探测性能,而且在15%的探测效率下,2.7ns后发生后脉冲的概率仅为每门6.0×10-5。Abstract A high-speed single-photon detection technique based on gated InGaAs/InP avalanche photodiode （APD） is proposed. The 1.5 GHz harmonics ultrashort pulse is applied to an InGaAs/InP APD, and the photo-excited avalanche signal is buried in the harmonics noise due to the capacitive response of APD. By utilizing a 700 MHz low-pass filter, we achieve 50.6 dB noise suppression and extract the avalanche signal efficiently. With the InGaAs/InP APD operated under --30 ℃ by thermal electrical cooler, and driven by 1.5 GHz harmonics ultarshort pulse gating, a detection efficiency of 35 % at 1550 nm with the dark count probability of 6.4 × 10-5 per gate is obtained, and the afterpulse probability is 6. 0× 105 per gate after 2.7 ns at the detection efficiency of 15 %.

关 键 词：探测器 单光子探测 铟镓砷 铟磷雪崩光电二极管 

分 类 号：TN215[电子电信—物理电子学]