HEDP溶液体系镀铜添加剂的研究  

Study on additives of HEDP copper plating system

作　　者：黄崴[1] 曾振欧[1] 谢金平 李树泉 

机构地区：[1]华南理工大学化学与化工学院,广东广州510640 [2]广东致卓精密金属科技有限公司,广东佛山528247

出　　处：《电镀与涂饰》2014年第3期95-99,共5页Electroplating & Finishing

摘　　要：在由160g／LHEDP、40g／LCuS04．5H20和40g／LK2C03组成的基础镀液中，研究了添加剂HES、HEA和HEM对镀铜工艺和镀层性能的影响。结果表明，使用HES或HEA做添加剂时，HEDP溶液体系镀铜的电流密度范围分别拓宽至0．05～10．01A／dm0和0—8．99A／dm^2，HEM可提高低电流密度区的镀铜层光亮度，HES和HEA都具有细化晶粒和整平的作用。通过正交试验得到的最优复合添加剂为：HEA1．5mL／LHES3．0mL／L，HEM0．5mL／L，CB-10．5mL／L。采用复配添加剂后，镀速和阴极电流效率提高，可在0．24～6．70A／dm2电流密度范围内制得全光亮、均匀致密、无微裂纹和结合力较好的铜镀层。The effects of additives including HES, HEA, and HEM on copper plating process in a bath containing HEDP 160 g/L, CuSO45H20 40 g/L and K2CO3 40 g/L, and on the performances of the coatings obtained therefrom were studied. The results showed that the current density range for copper plating in HEDP system extends to 0.05-10.01 A/din2 when using HES and to 0-8.99 A/dm2 when using HEA. It was found that HEM improves the brightness of copper coating in low current density area, while both HEM and HEA have the effects of grain refinement and leveling. The composition of optimal composite additive obtained by orthogonal test is as follows： HEA 1.5 mL/L, HES 3.0 mL/L, HEM 0.5 mL/L, and CB-1 0.5 mL/L. The deposition rate and cathodic current efficiency were improved by using the composite additive. Fully-bright, uniform, compact and crack-free copper coatings with excellent adhesion can be prepared in the current density range of 0.24-6.70 A/dm2.

关 键 词：无氰镀铜 羟基亚乙基二膦酸 添加剂 镀液 镀层 性能 

分 类 号：TQ153.14[化学工程—电化学工业]