IGBT控制大电流脉冲放电时的过压保护  

The Overvoltage Protection of IGBT When used to Control Pulse Discharge with Large Current

作　　者：宗泽源[1] 施芸城[1] 

机构地区：[1]东华大学理学院,上海201620

出　　处：《江西科学》2014年第1期95-98,共4页Jiangxi Science

摘　　要：IGBT在控制脉冲大电流时,回路杂散电感中存在较高电流变化率所形成的纳秒高尖峰电压,从而产生过压损坏。通过分析3种类型(C型、RC型和RCD型)吸收电路的特点,采用RCD型和C型吸收电路的组合后,可以有效地使尖峰能量向脉冲后沿分散,使高压尖峰转化为低压震荡。最终可将IGBT在关断时的C-E极间电压控制在不超过母线电压的1/3,从而达到保护IGBT的目的。A nanosecond high voltage peak is observed when IGBT is used to control large current pulse. It is produced by a salutatory current reducing rate along with the stray inductances, and the IGBT is led to overvoltage damage. By analyzing three styles of snubber circuits （ Type C, Type RC and Type RCD）, a combination of type RCD and C is considered. It is efficient to disperse the peak energy, and turns the high voltage peak to low voltage oscillation. And more, the voltage Vce of IGBT does not exceed 1/3 busbar voltage. The goal of IGBT protection can be achieved.

关 键 词：IGBT 大电流 过压保护 RCD吸收电路 

分 类 号：TN386.2[电子电信—物理电子学]