Correlation between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode  

作　　者：刘宇安 罗文浪 

机构地区：[1]School of Electronics & Information Engineering,Jinggangshan University

出　　处：《Journal of Semiconductors》2014年第2期67-71,共5页半导体学报（英文版）

摘　　要：The correlation model between dark current RTS noise and defects for A1GalnP multiple-quantum-well laser diode is derived. Experimental results show that dark current RTS noise caused carrier number fluctuations at the interface of the heterojunction in the active region. According to this correlation model, the defect types are determined, and the defects＇ energy levels are quantitatively determined. The comer frequency of RTS noise power spectral density is analyzed. The experimental results are in good agreement with the theoretical. This result provided an effective method for estimating the deep-level traps in the active region of A1GaInP multiple quantum well laser diode.The correlation model between dark current RTS noise and defects for A1GalnP multiple-quantum-well laser diode is derived. Experimental results show that dark current RTS noise caused carrier number fluctuations at the interface of the heterojunction in the active region. According to this correlation model, the defect types are determined, and the defects＇ energy levels are quantitatively determined. The comer frequency of RTS noise power spectral density is analyzed. The experimental results are in good agreement with the theoretical. This result provided an effective method for estimating the deep-level traps in the active region of A1GaInP multiple quantum well laser diode.

关 键 词：random telegraph signal noise DEFECT A1GaInP laser diode 

分 类 号：TN31[电子电信—物理电子学]