1.3-μm 1×4 MMI coupler based on shallow-etched InP ridge waveguides  

作　　者：郭菲 陆丹 张瑞康 王宝军 张希林 吉晨 

机构地区：[1]Key Laboratory of Semiconductor Materials,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2014年第2期82-85,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61274046,61201103);the National High Technology Research and Development Program of China(No.2013AA014202)

摘　　要：1.3-μm 1 × 4 MM1 coupler is designed and fabricated on an InP substrate based on a shallow etched waveguide structure. Tapered input/output waveguides and a bending waveguide design are adopted and applied in the device to optimize the performance. The average excess losses of the 1 × 4 MMI coupler per channel are 2.8, 1.7, 2.9, and 2.9 dB, respectively. The smallest excess loss can be lower than 0.5 dB in the 40-nm spectrum bandwidth. The average uniformity between the four channels of the MMI coupler is 1.3 dB, while the smallest uniformity is only 0.4 dB.1.3-μm 1 × 4 MM1 coupler is designed and fabricated on an InP substrate based on a shallow etched waveguide structure. Tapered input/output waveguides and a bending waveguide design are adopted and applied in the device to optimize the performance. The average excess losses of the 1 × 4 MMI coupler per channel are 2.8, 1.7, 2.9, and 2.9 dB, respectively. The smallest excess loss can be lower than 0.5 dB in the 40-nm spectrum bandwidth. The average uniformity between the four channels of the MMI coupler is 1.3 dB, while the smallest uniformity is only 0.4 dB.

关 键 词：MMI shallow etched waveguide beam propagation method 

分 类 号：TN622[电子电信—电路与系统]