La_2O_3掺杂对BZT20陶瓷介电性能的影响  

Influence of La_2O_3-doping on Dielectric Properties of BZT20 Ceramics

作　　者：李远亮[1] 马雪刚[1] 徐祥红 曲远方[3] 

机构地区：[1]河北联合大学河北省无机非金属材料重点实验室,唐山063009 [2]装备学院昌平士官学校车辆装备系,北京102249 [3]天津大学先进陶瓷与加工技术教育部重点实验室,天津300072

出　　处：《中国陶瓷》2014年第3期12-15,共4页China Ceramics

基　　金：河北联合大学培育基金项目(No.LDPYS03);国家自然科学基金资助项目(No.51102076)

摘　　要：以BaCO3、ZrO2和TiO2等为原料,La2O3为掺杂剂,采用固相合成法制得了BaZr0.2Ti0.8O3(BZT20)介质瓷,研究了La2O3的掺杂量对体系介电性能的影响。结果表明:La2O3的掺杂能抑制试样晶粒尺寸的生长。在La2O3掺杂起始阶段,La3+进入A位位置,导致试样介电常数和损耗均增大,之后随La2O3掺杂量的增加,部分La3+进入B位位置,介电常数和介电损耗降低。结果也表明La2O3的掺杂能使试样居里温度移向高温方向。Using BaCO3, ZrO2 and TiO2, et al as crude materials, La203 as dopant, BZT20 ceramics were prepared and their dielectric properties are investigated. The doping of La203 can restrain the grain growth in BZT20 ceramics. In the first stage, La3＋ ions entered the A-site, resulting in the increase of both dielectric constant and dissipation factor~ when the La2O3 content was more than 0.05 at%, there was the drop of both dielectric constant and dissipation factor. the increase of La2O3. a small amount of La3＋ ions occupying the B-site, causing It is also found that Tc shifts to higher temperature with

关 键 词：陶瓷 掺杂 微观形貌 介电性能 

分 类 号：TQ174.75[化学工程—陶瓷工业]