Sm_2O_3掺杂对BCZTMY无铅压电陶瓷电性能的影响  被引量:1

Effect of Sm-doped in BCZTMY on Electrical Properties Lead-free Piezoelectric Ceramics

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作  者:黄小琴[1] 刘其斌[1,2] 张诚[1] 

机构地区:[1]贵州大学材料与冶金学院,贵阳550025 [2]凯里学院化学与材料工程学院,凯里556011

出  处:《中国陶瓷》2014年第3期24-27,共4页China Ceramics

基  金:贵州省工业攻关资助项目(黔科合GY(2013)3027)

摘  要:为了获得(Ba0.85Ca0.15)(Zr0.1Ti0.893Mn0.005Y0.002)O3(BCZTMY)无铅压电陶瓷优良的电性能,通过对其掺杂Sm2O3,采用固相合成法制备了BCZTMY-x wt%Sm无铅压电陶瓷。采用XRD、准静态d33压电常数仪等测试了BCZTMY-x wt%Sm陶瓷的相结构、压电性能和介电性能。结果表明,Sm3+作为施主掺杂物进入钙钛矿结构ABO3中的A位,而Y3+和Mn4+作为受主掺杂进入B位。掺杂不同含量的Sm2O3均形成了ABO3型钙钛矿结构,且提高了BCZTMY-x wt%Sm陶瓷的压电性能和介电性能。当Sm2O3的掺杂量为0.3 wt%时,所得陶瓷样品具有最佳电性能,压电常数d33=171 pC/N,机电耦合系数kp=20.45%,介电常数εr=5451,介电损耗tanδ=2.03%。To obtain the superior electrical properties of (Ba0.85Ca0.15)(Zr0.1Tio.893Mn0.005Y0.002)O3(BCZTMY) lead-free piezoelectric ceramics by doping the Sm203. BCZTMY-x wt% Sm ceramics were prepared by the conventional solid state reaction method. With the help of XRD and quasi-static d33 meter etc., the microstructure, piezoelectric and dielectric properties of BCZTMY-x wt% Sm ceramics were investigated. The result indicated that Sm3+ was selected as a donor substituting for the A-site, while y3+ and Mn4+ as acceptor dopants substituting for the B-site. All the ceramics possessed a pure perovskite structure, and enhanced the piezoelectric and dielectric properties. The result shown that the ceramics with 0.3wt% exhibit the optimum electrical properties., d33=171 pC/N, kv=20.45%, e =5451 and tan =2.03%, respectively.

关 键 词:无铅压电陶瓷 Sm2O5 掺杂 压电性能 介电性能 

分 类 号:TM282[一般工业技术—材料科学与工程]

 

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