一种具有高填充因子吸收层和低失调低噪声读出电路的红外探测系统(英文)  

Infrared detectors with high fill-factor absorber and low offset low noise readout circuit

作　　者：黄卓磊[1] 王玮冰[1,2] 蒋文静[1,2] 欧文[1,2] 明安杰[1,2] 刘战锋[1,2] 陈大鹏[1,2] 

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029 [2]江苏物联网研究发展中心智能集成传感器工程中心,江苏无锡214135

出　　处：《红外与毫米波学报》2014年第1期50-54,67,共6页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Scie:nce and Technology Major Project of the Ministry of Science and Technology of China(2011ZX02507-004)

摘　　要：使用红外探测器及读出电路,研制成功非制冷红外探测系统.探测器用二极管作为温度传感器,使其与集成电路工艺相兼容.采用了新的器件结构,使得填充因子从20%提高到80%.器件的微机械结构面积为35μm×35μm.读出电路的失调电压为3μV.探测器的输出噪声为2μV.探测器的电压响应率为7 894.7 V/W,黑体探测率D*为1.56×109cmHz1/2/W,噪声等效温差为330 mK,响应时间为27 ms.By using infrared detector and readout circuit, an uncooled infrared detecting system was developed. The detec- tor using diode as the temperature sensor is compatible with integrated circuit process. A new device structure was used to improve the fill-factor from 20% to 80%. The area of micromachined structure is 35 μm × 35 μm. The offset voltage of the readout circuit is 3 μV. The output noise of the detector is 2 μV. The responsivity of the detector is 7 894.7 V/W, specific deteetivity of the detector is 1.56× 109 cmHz1/2/W, noise equivalent temperature difference of the detector is 330 inK, and response time of the detector is 27 ms.

关 键 词：红外探测器 二极管 填充因子 吸收层 读出电路 

分 类 号：TN4[电子电信—微电子学与固体电子学]