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机构地区:[1]西安科技大学电气与控制工程控学院,陕西西安710054
出 处:《电子技术应用》2014年第2期49-52,共4页Application of Electronic Technique
基 金:国家自然科学基金资助项目(50977077;51277149)
摘 要:针对电源管理芯片中的重要模块UVLO,在带隙基准电压源结构的基础上,引入了对带隙基准的高阶温度补偿功能,有效减小迟滞电压的漂移。同时,该UVLO电路不需要外部提供基准电压和偏置电流,提高了模块电路的可靠性,而且电路具有结构简单、功耗低、电压精确、温度敏感性低等优点。在BCD工艺下,采用Cadence的Spectre软件对电路进行仿真验证。仿真结果证明了所设计UVLO的可行性和正确性。For the under voltage lockout protection being an important module in the power management chips, this paper pre- sents the optimization design scheme of an under voltage lockout circuit in a standard BCD process, to effectively reduce the hys- teresis voltage drift. On the basis of the band-gap structure, the high-order temperature compensation function is introduced to the band-gap reference. Thus, the reliability of the UVLO circuit is improved without an external reference voltage and bias current. At the same time, the designed UVLO has the advantages of simple structure, low power consumption, high voltage accuracy and low temperature sensitivity. In a standard BCD process, the designed circuit is simulated by using Spectre of Cadence. The simula- tion results proved the feasibility and correctness of the designed UVLO.
分 类 号:TN432[电子电信—微电子学与固体电子学]
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