高功率微波对有源电路的损伤效应分析方法  

Analytical method of HPM radiation damage effect on active circuit

作　　者：高雪莲[1] 冯楠[1] 张晓宇[1] 赵磊[1] 高爽[1] 

机构地区：[1]华北电力大学电气与电子工程学院,北京102206

出　　处：《兰州理工大学学报》2014年第1期95-98,共4页Journal of Lanzhou University of Technology

基　　金：科技部国际合作项目(2011DFR00780);2012中央高校基本科研业务费专项资金

摘　　要：提出一种基于场路结合的高功率微波辐照对有源电路损伤效应仿真分析新方法.该方法采用有限元计算外部电场分布,将外部电磁干扰对内部电路的影响等效为电压源的作用,将等效干扰电压源施加到有源电路,再对电路进行仿真分析,得到高功率微波辐照对有源电路的损伤结果.弥补了以往以大量实验为主,缺乏理论预测及成本较高的缺陷.实例仿真分析表明,该方法直观有效地给出了有源电路在高功率微波辐照下的场结果,以及电路参数影响情况,有助于电路系统提高对高功率微波的抗干扰性进行优化设计.Based on the combination of electromagnetic theory and circuit analysis,a new approach to the simulation analysis of High Power Microwave （HPM） radiation damage effects on active circuit was presented,in which the finite element method was adopted to calculate the external electric field,the required surface interference voltage was obtained through integration of electric field along the appointed route,and the influence exerted by external electromagnetic interference on the internal circuit was regarded as an equivalent effect of the voltage source.Then,simulation of interference voltage source on active circuit was used to carry out the effort of HPM radiation.This approach is superior to previous HPM damage effect analysis which mainly relies on experiments but lack of theoretical basis and high cost.The simulation experiments show that the proposed method is easy and intuitional,and not only give electromagnetic field,but also carry out parameter variation of the circuit.It＇s helpful to optimize the design of circuit to increase the interference immunity.

关 键 词：高功率微波 损伤效应 有源电路 

分 类 号：TN70[电子电信—电路与系统]