近红外单光子读取电路  

Near infrared readout circuit of single photon diode

作　　者：黄振[1,2] 蒋远大[2] 孙志斌[2] 郑福[1,2] 王超[2] 翟光杰[2] 

机构地区：[1]中国科学院大学,北京100049 [2]中国科学院国家空间科学中心,北京100190

出　　处：《红外与激光工程》2014年第2期464-468,共5页Infrared and Laser Engineering

基　　金：国家自然科学基金(61274024);国家自然科学青年科学基金(40804032)

摘　　要：近红外单光子读取电路读取盖革模式下的雪崩光电二极管雪崩信号。采用两个ps级的可编程ECL延时芯片,获得可调的门控脉冲,控制雪崩光电二极管(APD)死时间和淬灭雪崩信号,同时减少后脉冲的影响。详细介绍了门控脉冲产生模块、死时间控制模块以及雪崩信号提取电路。主要采用延迟鉴别、边沿锁存的方法提取雪崩光电二极管雪崩信号。在整个实验过程中,雪崩光电二极管工作温度为-55℃,脉冲宽度10ns,门控频率1MHz和10MHz,激光器激光波长1550nm,单光子探测器是PGA-400InGaAs雪崩光电二极管。The near infrared readout circuit reads avalanche signals of avalanche-photon-diode operating in the Geiger-mode. Two ps-grade programmable ECL delay chips were used to get adjustable gate pulse, control APD′s dead time, quench the avalanche signals and decrease the after-pulsing. The paper detailed describes gate pulse generated block, dead time controlment block and avalanche signals readout block. A moderate delay and edge trigger flip-flop were used to read avalanche-photon-diode signals. During the whole experiments, avalanche-photon-diode worked in the temperature -55＆#176;C, the gate pulse width is 10 ns, the gate frequency are 1 MHz and 10 MHz, the wavelength of laser is 1 550 nm and the single photon detector is PGA-400 InGaAs avalanche-photon-diode.

关 键 词：近红外 读取电路 铟镓砷雪崩光电二极管 盖革模式 

分 类 号：O439[机械工程—光学工程] TP11[理学—光学]