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作 者:彭柱 曾体贤[1,2] 陈太红[1] 彭丽萍[2] 王新明[2] 王雪敏[2] 吴卫东[2]
机构地区:[1]西华师范大学物理与电子信息学院,南充637009 [2]中国工程物理研究院激光聚变研究中心等离子体物理重点实验室,绵阳621900
出 处:《人工晶体学报》2014年第1期64-67,92,共5页Journal of Synthetic Crystals
基 金:中国博士后科学基金(2013M542294);四川省教育厅重点项目(01ZB089);西华师范大学基本科研基金资助项目(13C008)
摘 要:研究了ZnO-C体系化学气相法生长ZnO单晶的Zn、CO、O2、CO2、ZnO气体热力学平衡过程,计算发现主要气相物种为Zn,CO。分析了Zn和CO在N2,Ar,He气体中的扩散系数,发现Ar气既可抑制Zn物质流传输,又可减缓Zn扩散系数随温度升高而递减的趋势,是较适宜的外加气体。建立了ZnO单晶气相生长一维传输模型,揭示了Zn的动力学输运过程,获取了三个温度梯度下(氩气背景压力分别为0 atm、0.5 atm、1 atm)Zn的物质流密度,以及温度梯度、背景压力对最大生长速率的影响。The thermodynamics equilibrium process for Zn, ZnO,O2, CO and CO2 gas in ZnO single crystal growth with a transport agents C were studied. The main reactants were found as Zn and CO gas. The diffusion coefficient of Zn and CO in N2, Ar and He was analyzed. The results indicate that Ar was verified as the feasible adscititious gases, which can slow down effectively the transport of zinc vapor, and also reduce the decrease tendency of diffusion coefficient with the increase of temperature. A one- dimensional dynamics transport model was built, then the flux density of the Zn and CO gas at three kinds of temperature gradients (Ar background pressure is 0 atm, 0.5 atm and 1 atm) were calculated. The effect of both the temperature gradient and background pressure on the maximum growth rate of ZnO was also obtained.
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