Fe_(73.5)CulNb_(1.5)Si_(13.5)B_9Mo_(1.5)粉体/硅橡胶复合薄膜与Fe_(73.5)CulNb_3Si_(13.5)B_9非晶薄膜层状结构的微应力阻抗效应研究（英文）  

The Tiny Stress Impedance Effect of Fe_(73.5)CulNb_(1.5)Si_(13.5)-B_9Mo_(1.5) Powder/Silicon Rubber Composite Film and Fe_(73.5)CulNb_3Si_(13.5)B_9 Amorphous Ribbon with Lamellar Structure

作　　者：付远[1] 朱正吼[1] 李晓敏[1] 周佳[1] 赵辉[1] 

机构地区：[1]南昌大学,江西南昌330031

出　　处：《稀有金属材料与工程》2014年第2期311-315,共5页Rare Metal Materials and Engineering

基　　金：NSFC United Fund(11076016);Advance Research of National“973”Program of China(2010CB635112);National Natural Science Foundation of China(60961001)

摘　　要：选用最大粒度为40μm的Fe73.5Cu1Nb1.5Si13.5- BeMo1.5粉体和硅橡胶混合制备的磁性薄膜作为压磁层。同时用Fe73.5CuiNb3Si13.5B9非晶薄膜作为压电层。测试频率范围从10kHZ到1MHz，并且压应力从0～0．14MPa。比较了两组层合结构的微应力阻抗效应，其中包括：压磁／压电／压磁层合结构和压电／压磁／压电层合结构。结果证明两组层合结构都存在不同程度的磁电耦合效应。在压应力小于0．02MPa时，磁电耦合效应随压应力增大而增大，大于0．02MPa时，磁电耦合效应达到极大值，同时它对微应力阻抗效应贡献不明显。因为两组层合结构具有各自不同的磁电耦合体系，压磁／压电／压磁层合结构以压磁效应影响阻抗为主而压电／压磁／压电层合结构以压电效应影响阻抗为主。The composite piezomagnetic film was prepared by using Fe73.5Cu1Nb1.5Si13.5- BeMo1.5 amorphous powder with particles size of 40 μm as dispersing agent and silicon rubber as the matrix. Meanwhile, the Fe73.5CulNb3Si13.5B9 amorphous ribbon was se- lected as piezoelectric layer. The testing frequency was ranged from 10 kHz to 1 MHz, and the pressure stress was from 0 to 0.14 MPa. The tiny stress impedance （TST） effects of the two types of layer structures were compared in the experiment, the two types included piezomagnetic/piezoelectric/piezomagnetic （pro/pc/pro） layer and piezoelectric/piezomagnetic/piezoelectric （pe/pm/pe） layer. It is found that both of the layer structures have magnetoelectricity coupling effects. The magnetoelectricity coupling effect enhances with the increase of pressure stress before 0.02 MPa, and afterward the magnetoelectricity coupling effect comes to a maximum value, which has little contribution to TSI. Since two types of layer structure are both of varying magnetoelectricity cou- pling effect, pm/pe/pm is piezomagnetic based and pe/pm/pe is piezoelectric based.

关 键 词：应力阻抗 层状结构 压磁 压电 磁电耦合 

分 类 号：TB383.2[一般工业技术—材料科学与工程]