电子束端面熔炼法制备高纯钨的研究  

Preparation procedure of high purity tungsten via electron beam side surface melting

作　　者：马运柱[1] 刘业[1] 刘文胜[1] 龙路平[1] 

机构地区：[1]中南大学粉末冶金国家重点实验室,长沙410083

出　　处：《材料科学与工艺》2014年第1期30-35,共6页Materials Science and Technology

基　　金：国家自然科学基金资助项目(50774098)

摘　　要：采用250 kW的电子束熔炼炉对纯度为99.955%的钨棒进行提纯研究,利用扫描电镜、电感耦合等离子体光谱法(ICP-MS)和微米压痕仪分别对原料钨棒和熔炼后钨锭的形貌、纯度和显微硬度进行观察和测试.研究表明:在电子束轰击原料钨棒的过程中,钨棒端面的边缘最先熔化;经电子束熔炼后,钨棒的整体纯度显著提高,达到了99.975%,间隙杂质O和C的脱除率分别达到55.5%和45.8%;非间隙杂质的蒸汽压与脱除率密切相关,高蒸汽压的杂质元素Cd、As、K、Mg脱除较为完全,其脱除率分别为95%、90%、75%和71.4%,在钨棒中含量分别降至1、1、5和10μg/g.The tungsten rod with a purity of 99. 955% was purified by using a 250 kW electron beam melting furnace and the morphology, purity and micro-hardness of the raw tungsten rod and melted tungsten ingot were observed and measured by scanning electron microscopy （SEM）, inductively coupled plasma atomic emission spectrometry （ICP-MS） and micron-indentation instrument, respectively. The results showed that, during the electron beam bombardment, the edge of raw tungsten end face was first melted. After electron beam melting for one time, the purity of the raw tungsten significantly was increased to 99. 975%, the removal ratios of interstitial impurities O and C elements were 55.5% and 45.8%, respectively. The vapor pressures of non- interstitial impurities were closely related to the removal rate, and the impurity elements with higher vapor pressures, such as As, Cd, K and Mg elements, were removed more completely, whose removal ratios were 90%, 95%, 75 % and 71.4%, respectively. At the same time, As, Cd, K and Mg element contents were reduced to 1,1,5 and 10 μg/g in the tungsten ingot, respectively.

关 键 词：电子束熔炼 高纯钨 净化提纯 间隙杂质 非间隙杂质 

分 类 号：TF804.8[冶金工程—有色金属冶金]