Type Inversion and Certain Physical Properties of Spray Pyrolysed SnO_2:Al Films for Novel Transparent Electronics Applications  

作　　者：K.Ravichandran K.Thirumurugan 

机构地区：[1]Post Graduate and Research Department of Physics,AVVM Sri Pushpam College(Autonomous)

出　　处：《Journal of Materials Science & Technology》2014年第2期97-102,共6页材料科学技术（英文版）

基　　金：Financial support from the University Grants Commission ofIndia through the Major Research Project(F.No.40-28/2011(SR));the DST Grant(D.O.No.SR/S2/CMP-35/2004)

摘　　要：Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The AI doping level varies between 0 and 30 at.% in the step of 5 at.%. The resistivity （p） is the minimum （0.38 Ω cm） for 20 at.% of AI doping. The possible mechanism behind the phenomenal zig-zag variation in resistivity with respect to AI doping is discussed in detail. The nature of conductivity changes from n-type to p-type when the AI doping level is 10 at.%. The results show that 20 at.% is the optimum doping level for good quality p-type SnO2：AI films suitable for transparent electronic devices.Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The AI doping level varies between 0 and 30 at.% in the step of 5 at.%. The resistivity （p） is the minimum （0.38 Ω cm） for 20 at.% of AI doping. The possible mechanism behind the phenomenal zig-zag variation in resistivity with respect to AI doping is discussed in detail. The nature of conductivity changes from n-type to p-type when the AI doping level is 10 at.%. The results show that 20 at.% is the optimum doping level for good quality p-type SnO2：AI films suitable for transparent electronic devices.

关 键 词：Tin oxide films P-type transparent conducting oxide （TCO） Spray pyrolysis Transparent electronics Electrical properties Optical properties 

分 类 号：TB383.2[一般工业技术—材料科学与工程]