衬底材料对空心阴极沉积氢化微晶硅薄膜的影响  

Impact of substrates on hydrogenated microcrystalline silicon thin films deposited by hollow cathode discharge

作　　者：葛腾[1] 陈玖香[1] 张受业[1] 施继龙[1] 陈强[1] 

机构地区：[1]北京印刷学院,等离子体物理及材料研究室,北京102600

出　　处：《真空》2014年第2期31-34,共4页Vacuum

基　　金：国家自然科学基金(No.11175024;11375031);北京市自然科学基金(No.1112012);2011BAD24B01;KM201110015008;KM201010015005;KM201310015006;北京印刷学院重点项目(No.23190113051);PHR20110516;PHR201107145;2012年度福建省科技厅工业科技重点项目(2012H0008)共同资助

摘　　要：本文中，我们采用空心阴极等离子体增强化学气相沉积（MHC-PECVD）在玻璃、表面溅射氧化铟锡（ITO）的玻璃（玻璃＋ITO）以及表面溅射ITO的聚酰亚胺（PI＋ITO）柔性衬底上沉积氢化微晶硅（μc-Si：H），研究不同衬底材料对微晶硅薄膜性质的影响。我们发现在 PI＋ITO衬底上沉积薄膜的结晶率（Xc）最小，且结晶率最大值时的温度依赖沉底材料：对于 PI＋ITO 衬底来说，结晶率最大值时的温度为200℃，而对于玻璃和玻璃＋ITO 衬底来说，这个温度会在250℃－300℃之间浮动。我们认为PI＋ITO衬底上薄膜较低的结晶率与其较高的热膨胀系数（CTE）以及小分子和气体的释放有关。In this work , we employed micro-hollow cathode （MHC）to perform plasma enhanced chemical vapor deposition （PECVD）of hydrogenated microcrystalline silicon （μc-Si：H）. The impact of substrate materials on the μc-Si：H film quality was explored . Three kinds of substrates , i . e . glass , indium tin oxide （ITO）coating glass and ITO coated polyimide（PI）were selected for these researches . We found that crystalline volume fraction （notated as Xc）on the ITO coated PI substrate was the smallest in three kinds of substrates , and the temperature at maximum Xc depends on substrate materials：for ITO coated PI substrate , the temperature at maximum Xc was 200℃, whereas it was 250℃-300℃ for the glass and ITO coated glass sub-strates.We assume that the lower Xc on the ITO coated PI substrate is related to the high expansion coefficient of plastic and the small molecules and gas releasing from the substrate .

关 键 词：微晶硅 低温沉积 空心阴极放电 结晶率 柔性衬底 

分 类 号：O484.1[理学—固体物理]