A high speed 1000 fps CMOS image sensor with low noise global shutter pixels  被引量:9

A high speed 1000 fps CMOS image sensor with low noise global shutter pixels

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作  者:ZHOU YangFan CAO ZhongXiang QIN Qi LI QuanLiang SHI Cong WU NanJian 

机构地区:[1]State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences

出  处:《Science China(Information Sciences)》2014年第4期231-238,共8页中国科学(信息科学)(英文版)

基  金:supported by National Natural Science Foundation of China(Grant No.60976023);Special Funds for Major State Basic Research Project of China(Grant No.2011CB932902)

摘  要:A low read noise 8T global shutter pixel for high speed CMOS image sensor is proposed in this paper. The pixel has a pixel level sample-and-hold circuit and an in-pixel amplifier whose gain is larger than one. Using pixel level sample-and-hold circuit, the KTC noise on FD node can be effectively cancelled by correlated double sampling operation. The in-pixel amplifier with a gain larger than one is employed for reducing the pixel level sample-and-hold capacitors thermal noise and their geometric size. A high speed 1000 fps 256 × 256 CMOS image sensor based on the pixel is implemented in 0.18μm CMOS process. The chip active area is 5 mm x 7 mm with a pixel size of 14 μm×14 μm. The developed sensor achieves a read noise level as low as 14.8e- while attaining a high fill factor of 40~0. The full well capacity can contain 30840e- and the resulting signal dynamic range is 66 dB.A low read noise 8T global shutter pixel for high speed CMOS image sensor is proposed in this paper. The pixel has a pixel level sample-and-hold circuit and an in-pixel amplifier whose gain is larger than one. Using pixel level sample-and-hold circuit, the KTC noise on FD node can be effectively cancelled by correlated double sampling operation. The in-pixel amplifier with a gain larger than one is employed for reducing the pixel level sample-and-hold capacitors thermal noise and their geometric size. A high speed 1000 fps 256 × 256 CMOS image sensor based on the pixel is implemented in 0.18μm CMOS process. The chip active area is 5 mm x 7 mm with a pixel size of 14 μm×14 μm. The developed sensor achieves a read noise level as low as 14.8e- while attaining a high fill factor of 40~0. The full well capacity can contain 30840e- and the resulting signal dynamic range is 66 dB.

关 键 词:global shutter CDS low noise fill factor high speed image sensor 

分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置]

 

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