Helium-Implantation-Induced Damage in NHS Steel Investigated by Slow-Positron Annihilation Spectroscopy  

作　　者：LI Yuan-Fei SHEN Tie-Long GAO Xing GAO Ning YAO Cun-Feng SUN Jian-Rong WEI Kong-Fang LI Bing-Sheng ZHANG Peng CAO Xing-Zhong ZHU Ya-Bin PANG Li-Long CUI Ming-Huan CHANG Hai-Long WANG Ji ZHU Hui-Ping WANG Dong SONG Peng SHENG Yan-Bin ZHANG Hong-Peng HU Bi-Tao WANG Zhi-Guang 

机构地区：[1]Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 [2]University of Chinese Academy of Sciences, Beijing 100049 [3]School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 [4]Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049

出　　处：《Chinese Physics Letters》2014年第3期111-114,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2010CB832902, and the National Natural Science Foundation of China under Grant Nos 91026002, 91126011 and 11275005.

摘　　要：Evolutions of defects and helium contained defects produced by atomic displacement and helium deposition with helium implantation at different temperatures in novel high silicon （NHS） steel are investigated by a slow positron beam. Differences of the defect information among samples implanted by helium to a fluence of 1×1017 ions/cm2 at room temperature, 300°C, 450°C and 750°C are discussed. It is found that the mobility of vacancies and vacancy clusters, a recombination of vacancy-type defects and the formation of the He-V complex lead to the occurrence of these differences. At high temperature irradiations, a change of the diffusion mechanism of He atoms/He bubbles might be one of the reasons for the change of the S-parameter.Evolutions of defects and helium contained defects produced by atomic displacement and helium deposition with helium implantation at different temperatures in novel high silicon （NHS） steel are investigated by a slow positron beam. Differences of the defect information among samples implanted by helium to a fluence of 1×1017 ions/cm2 at room temperature, 300°C, 450°C and 750°C are discussed. It is found that the mobility of vacancies and vacancy clusters, a recombination of vacancy-type defects and the formation of the He-V complex lead to the occurrence of these differences. At high temperature irradiations, a change of the diffusion mechanism of He atoms/He bubbles might be one of the reasons for the change of the S-parameter.

分 类 号：TN304.12[电子电信—物理电子学] TQ424.26[化学工程]