Tuning Out-of-Plane Spin Polarization Using in-Plane Magnetic Fields in a Quasi-One-Dimensional Quantum Wire Embedded in （110） Plane  

作　　者：SUN Jin-Fang CHENG Fang 

机构地区：[1]The State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 [2]Department of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410004

出　　处：《Chinese Physics Letters》2014年第3期148-151,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2011CB922204 and 2012CB934304, the National Natural Science Foundation of China under Grant Nos 11374002 and 10934007, and the Hunan Provincial Natural Science Foundation of China under Grant No 13JJ2026.

摘　　要：We investigate theoretically the combination effect of an in-plane magnetic field and spin-orbit interactions （SOIs） on the spin and charge transport property of a quasi-one-dimensional quantum wire embedded in the （110） crystallographic plane. We find that the oscillations of the conductance induced by the SOIs become more significant and different for the spin-up and spin-down electrons in the presence of the in-plane magnetic field. The conductance exhibits a significant anisotropic behavior and electrons exhibit out-of-plane spin polarization which can be tuned by an in-plane magnetic field. These features offer us an efficient way to control SOI-induced spin transport using in-plane magnetic fields.We investigate theoretically the combination effect of an in-plane magnetic field and spin-orbit interactions （SOIs） on the spin and charge transport property of a quasi-one-dimensional quantum wire embedded in the （110） crystallographic plane. We find that the oscillations of the conductance induced by the SOIs become more significant and different for the spin-up and spin-down electrons in the presence of the in-plane magnetic field. The conductance exhibits a significant anisotropic behavior and electrons exhibit out-of-plane spin polarization which can be tuned by an in-plane magnetic field. These features offer us an efficient way to control SOI-induced spin transport using in-plane magnetic fields.

分 类 号：TN6[电子电信—电路与系统] O441.4[理学—电磁学]