基于RSM的SiC单晶片切割过程多目标优化  

Multiple Objective Optimization for SiC Single Crystal Wafers Cutting Process Based on Response Surface Method

作　　者：李淑娟[1] 万波[1] 胡超[1] 

机构地区：[1]西安理工大学机械与精密仪器工程学院,西安710048

出　　处：《机械科学与技术》2014年第3期452-459,共8页Mechanical Science and Technology for Aerospace Engineering

基　　金：国家自然科学基金项目(51175420);陕西省科技攻关项目(2010K09-01);陕西省教育厅基金项目(11JK0849/11JS074)资助

摘　　要：SiC单晶体是一种高硬度、高脆性的难加工材料,其切割过程中的工艺参数对切割表面质量、锯切力以及线锯使用寿命有重要的影响。以线锯速度、工件进给速度和工件转速为设计因子进行三因子三水平的中心复合试验设计,采用响应曲面法对试验结果进行分析,分别建立表面粗糙度、锯切力和线锯寿命的响应面模型,获得了三个单目标优化的切割工艺参数。同时根据响应面模型,建立了表面粗糙度、锯切力和线锯寿命同时达到均衡优化的模型,根据满意度函数方法,得到最佳的切割工艺参数。多目标优化结果表明:当SiC切片表面粗糙度的预测值为0.6951μm,锯切力预测值为2.665 15 N,线锯寿命预测值为519.87 min时,获得了最佳的切割工艺参数。SiC single crystal has high hardness and brittleness, therefore being difficult to machine. Its technical parameters in the process of cutting are vitally important for the surface quality, cutting force, and the life of a wire saw when the SiC single crystal wafer is machined. This paper uses the velocity of the wire saw, the feeding velocity of workpiece and its rotational speed as the design factors and designs the three-factor and three-level central com- posite experiment. The response surface method is used to analyze the test results; the response surface models of the surface roughness of the wafer, cutting force and the life of the wire saw are established respectively, and the cutting parameters such as surface roughness, cutting force and wire saw life optimization are obtained separately. According to the response surface models, the multiple-objective optimization models for surface roughness, cutting force and wire saw life are built respectively to reach equilibrium optimization; the desirability function method is used to obtain their reasonable cutting parameters. The multiple-objective optimization results show that when the surface roughness of the SiC single crystal wafer is 0.6951/xm, the cutting force is 2.665 15 N and the wire saw life is 519.87 rain utes. Through the multiple-objective optimization, the reasonable cutting parameters are obtained.

关 键 词：SiC单晶体 响应曲面法(RSM) 多目标优化 工艺参数优化 

分 类 号：TG506[金属学及工艺—金属切削加工及机床]