铜铟(镓)硒薄膜太阳电池吸收层制备研究  

Preparation of absorption layer of CuIn(Ga)Se thin films solar cell

作　　者：李丽波[1] 裴凤巍 王珩[1] 杨秀春[1] 田海燕[1] 

机构地区：[1]哈尔滨理工大学化学与环境工程学院绿色化工技术黑龙江省高校重点实验室,黑龙江哈尔滨150040

出　　处：《电源技术》2014年第3期572-575,共4页Chinese Journal of Power Sources

基　　金：黑龙江省教育厅科学技术研究项目(12521z008);黑龙江省自然科学基金项目(B201007);哈尔滨市科技创新人才研究专项资金项目(2012RFQXG085)

摘　　要：铜铟(镓)硒(CIGS)薄膜太阳电池有非常高的理论转化效率,吸收系数高,稳定性好,对材料缺陷的容忍度高等优点成为了近年来电池研究的热点。介绍了目前国内外制备CuIn(Ga)Se薄膜的方法,包括真空蒸法,溅射法、电沉积法,溶剂热法,溶胶凝胶法等,阐述了每种方法制备出的铜铟(镓)硒薄膜的组成、微观结构、光伏性能及它们之间的联系。The advantages of CIGS thin film solar cells, such as high theoretical conversion efficiency, high absorption coefficient （10^5 cm-1）, good stability and tolerance of defects in material, were the hot cell research in recent years. Several major domestic and foreign preparing process of CIS thin film, such as vacuum evaporation method, magnetron sputtering, electrodeposition, solvothermal, sol-gel method, were introduced. The composition, microstructure and photovoltaic performance of Culn（Ga）Se film prepared by each method were elaborated, as well as the relationship of the structure and properties.

关 键 词：铜铟(镓)硒 薄膜 太阳电池 制备 

分 类 号：TM914.4[电气工程—电力电子与电力传动]