电场辅助离子迁移过程中离子迁移深度模型  

Modeling of ion migration depth in field-assisted ion-migration

作　　者：王国强[1] 郝寅雷[1,2] 李宇波[1,2] 杨建义[1,2] 江晓清[1,2] 周强[1,2] 王明华[1,2] 

机构地区：[1]浙江大学信息与电子工程学系,浙江杭州310027 [2]浙江大学唐仲英传感材料及应用研究中心,浙江杭州310027

出　　处：《红外与激光工程》2014年第3期818-822,共5页Infrared and Laser Engineering

基　　金：国家自然科学基金(60977043);浙江省自然科学基金(Y1100665);中兴通信产学研项目

摘　　要：考虑了焦耳热导致的玻璃基片温度升高效应,建立了玻璃基片上电场辅助离子迁移(FAIM)过程中离子迁移深度的计算模型。该模型首先通过求解玻璃基片的热平衡方程获得玻璃基片温度随时间的变化规律,在此基础上获得流过玻璃基片的电流密度以及电荷通量密度随时间的变化规律。最后利用电荷通量密度与离子迁移深度的正比关系计算离子迁移深度。利用该模型获得的模拟结果与实验结果的比较显示,在集成光学器件制作的实验参数下,利用该模型所获得的离子迁移深度变化的规律与相应的实验结果接近。分析表明,由于模型中考虑到了焦耳热导致的玻璃基片温度的升高,该模型用于研究FAIM过程中的迁移深度具有更好的普适性。A model for calculation of time dependence of ion migration depth in glass substrate in the process of field-assisted ion-migration （FAIM） was presented, in which glass wafer temperature rise induced by Joule heating effect was taken into consideration. In this model, glass wafer temperature rise behavior was firstly obtained by solving its thermal balance equation; after that, time dependence of electric current density, and in turn charge flux density flowing through glass wafer was calculated;finally, ion migration depth was calculated by utilizing its universally linear dependence on charge flux density. It can be observed that there exists a reasonable agreement between simulated data and experimental results in the respect of ion migration depth, for experimental conditions conventionally applied for glass-based integrated optical device fabrication. Analysis shows that this model possess wider adaptability than the conventional model in the respect of ion migration depth calculation, due to its involving of glass wafer temperature rise effect induced by Joule heating.

关 键 词：电场辅助离子迁移 玻璃 焦耳热效应 

分 类 号：TN252[电子电信—物理电子学]