阵列激光器的结特征参量及其可靠性研究  

Research on Junction Characteristic Parameter of Ld Array and its Reliability

作　　者：曹军胜[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所,长春130033

出　　处：《激光杂志》2014年第3期9-11,共3页Laser Journal

基　　金：国家自然科学基金青年科学基金项目(批准号:61006054);国家重大科学仪器专项(项目编号:2011YQ040077)

摘　　要：采用电导数方法提取了半导体激光器阵列的结特征参量m,并对阵列结特征参量m与器件可靠性的关系进行了理论与实验研究,结果表明:m值可以作为阵列可靠性检测的一个重要判据,同一批次的阵列器件中,m值大的器件属于低可靠性器件;阵列m值大则说明单元m值大,或阵列存在严重电流泄漏通道,或阵列单元一致性差等。The junction characteristic parameter m of semiconductor laser array has been acquired using the method of electrical derivative, and the relationship between m and device reliability has been studied. The theoretical and experimental research results show that the m values could be used as an important reliability criterion for laser arrays. In the same group of LD arrays, the device of big m value is low in reliability. Big m value shows that the junction characteristic parameter of the array unit is big, or a serious current leakage path exists in the LD array, or the unit consistency is poor.

关 键 词：半导体激光器 电导数 可靠性 

分 类 号：TN248.4[电子电信—物理电子学]