Sm掺杂对TiO_2薄膜结构和电致变色性能的影响  

Effect of Sm doping on structure and electrochromic properties of TiO_2 thin film

作　　者：牛微[1,2] 毕孝国[2] 王刚[2] 孙旭东[1] 

机构地区：[1]东北大学材料与冶金学院,沈阳110819 [2]沈阳工程学院能源与动力工程学院,沈阳110136

出　　处：《功能材料》2014年第4期108-111,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50172030);教育部中央高校基本科研业务费专项资金资助项目(N100702001)

摘　　要：以钛酸四丁酯和硝酸钐为主要原料，采用溶胶-凝胶法制备了Sm掺杂TiO2薄膜。Sm掺杂的摩尔分数分别为0，2％，5％，10％和20％。采用XRD和TG-DTA表征了薄膜的结构和热重特性，使用电化学工作站和紫外-可见分光光度计研究了薄膜的电致变色性能。结果表明，Sm掺杂使得TiO2薄膜具有更高的无定形程度。250℃热处理的Sm掺杂TiO2薄膜具有较高的电荷存储能力和循环可逆性。Sm掺杂量为5％时，薄膜的峰值电流最大，电荷存储能力最强，注入电荷密度为13．35mC／cm2，循环可逆性K值为0．92。Sm掺杂TiO2薄膜在可见光范围内具有较好的光学透明度，透光率在70％～80％。适于用作电致变色器件的离子存储层。Sm doped TiO2 thin films were prepared by sol-gel methods with butyltitanate and samarium nitrate as main components. The Sm doping molar ratios are 0, 2%, 5% ,10% and 20%. Structural, thermogravimet- ric and electrochemical properties were investigated by XRD, TG-DTA, cyclic voltammetry curves（CV） and ul- traviolet visible spectroscopy. The result indicates that the Sm doped TiO2 thin film has higher amorphous de- gree. When the heat processing temperature was at 250 ℃, Sm doped TiO2 thin film has good ion storage ca- pacity and cyclic reversibility. When the doped amount of Sm was at 5 %, the peak current of thin film reaches its maximum value with most powerful charge storage capability, injected charge density at 13.35 mC/cmz ,and cyclic reversibility K value at 0.92. Sm doped TiO2 thin film has good transparency in the visible light range and transmittance was 70%-80%. This would be used as ion storage material in electrochromic glass.

关 键 词：电致变色 TIO2薄膜 循环伏安 稀土掺杂 

分 类 号：TB34[一般工业技术—材料科学与工程]