用于IGBT模块结温预测的热-电耦合模型研究  

Researches on electro-thermal model for junction temperature prediction in IGBT modules

作　　者：吴岩松[1] 罗皓泽[1] 李武华[1] 何湘宁[1] 邓焰[1] 

机构地区：[1]浙江大学电气工程学院,浙江杭州310027

出　　处：《电工电能新技术》2014年第3期13-17,65,共6页Advanced Technology of Electrical Engineering and Energy

基　　金：国家科技重大专项课题(2011ZX02604-001);国家重点基础研究发展计划(973)项目子课题(2012CB215106);欧盟FP7国际合作项目"HEMOW"(FP7-IRSES-269202)

摘　　要：随着IGBT模块功率等级及密度的提高,因功率损耗而导致芯片温升加剧进而导致变流系统崩溃的问题愈发突出。对功率器件及散热系统的深入研究有助于功率器件封装设计、器件选型、系统布局以及逆变器的可靠运行。本文通过有限元分析方法对IGBT模块和散热系统的瞬态热阻抗进行了提取,所得结果与厂商数据手册吻合,而且通过所用方法验证了热阻抗曲线的普适性,最后利用热特性RC等效网络建立热-电耦合模型,可对芯片动态结温进行预测。With the development of IGBT module and its increase of power level and density, system failures caused by junction temperature problem due to power loss are more and more severe. Deep researches on device and heatsink system can contribute to power device package design, device selection, system layout and inverter stable operation. This paper models and extracts the transient thermal impedance through FEM （Finite Element Method）, with simulation results in line with manufacturer＇s datasheet. It also verifies the thermal impedance curve＇ s universality and sets up electro-thermal model based on thermal characteristic RC equivalent network, which can be used for dynamic junction temperature prediction.

关 键 词：瞬态热阻抗 有限元 热-电耦合模型 动态结温预测 

分 类 号：TM930[电气工程—电力电子与电力传动] TK311[动力工程及工程热物理—热能工程]