锌修饰三氧化钨薄膜光电极的制备及其光电化学性能  

Preparation of tungsten oxide modified with Zn(Ⅱ)thin film photoelectrode and photoelectrochemical performace.

作　　者：刘丽英[1] 刘润[1] 徐铸德[1] 

机构地区：[1]浙江大学化学系,浙江杭州310027

出　　处：《浙江大学学报（理学版）》2014年第2期168-174,共7页Journal of Zhejiang University（Science Edition）

基　　金：国家自然科学基金资助项目(107301-N10921);国家重点基础研究发展计划资助项目(107301-N51102)

摘　　要：采用简单的阴极电沉积-浸渍法,在空气中经450℃热处理3h后,制备得到Zn(Ⅱ)修饰三氧化钨(WO3)薄膜光电极.根据X-射线粉末衍射(XRD)、拉曼(Raman)光谱、场发射扫描电镜(FE-SEM)、紫外-可见(UV-Vis)吸收光谱和荧光发射光谱(PL)等表征技术,分析了Zn(Ⅱ)的含量对WO3薄膜光电极的结构、形貌和光学性能的影响.通过在0.2M的Na2SO4溶液、外加电压为0.8V条件下的光电流测试表明,当Zn(Ⅱ)的相对原子比为9.99%时其光电性能最好,光电流值是纯WO3电极的3.5倍;外加电压为0.8V下的光电催化降解孔雀绿(MG)测试实验结果表明,其光电催化活性是纯WO3的2倍.Raman光谱表明一部分Zn(Ⅱ)以ZnO的形式附着在WO3的表面.附着在WO3表面上的ZnO对WO3所产生的光生电子-空穴对起到了有效分离的作用,使WO3的光电化学性能和光电催化活性得以提高.Thin film photoelctrodes of tungsten oxide （WO3） were modified with different amounts of Zn（ Ⅱ ） ions （Zn-WOa） through an cathode electrodeposition-impregnation method, followed by annealing in air at 450 ℃ for 3 h. The influences of Zn（ Ⅱ ） content on the structure, morphology and the optical properties of WO3 thin film pho- toelectrode were investigated by the XRD, Raman, FE-SEM, UV-Vis and PL characterization respectively. Through photoelectrochemistry measurements at 0.8 V vs. SCE in 0.2 M Na2SO4 aqueous, the Zn-WO3 thin film photoelectrode containing 9.99% Zn（Ⅱ） showed the best performance, and the photocurrent is 3.5 times of the pure WO3 photoelectrode. Photoelectrocatalytical （PEC） degradation malachite green （MG） at 0.8 V vs. SCE ex- periments showed that the PEC activity of Zn-WO3 thin film photoelectrode containing 9.99% Zn（Ⅱ） is 2 times of the pure WOa. Raman spectra showed that part of Zn（Ⅱ） formed ZnO particles on the surface of WO3. It was thought that ZnO act the role of separating the e -h＋ pairs that generated in the WO3, which is the reason of im- proved photoelectrochemical performance and photoelectrocatalytic activity.

关 键 词：锌修饰三氧化钨 三氧化钨 光电极 光电流 光电催化活性 

分 类 号：O649.4[理学—物理化学]