La^(3+) -doped SrBi_2Ta_2O_9 thin films for FRAM synthesized by sol-gel method  

作　　者：V.V.Sidsky A.V.Semchenko A.G.Rybakov V.V.Kolos A.S.Turtsevich A.N.Asadchyi W.Strek 

机构地区：[1]F.Skorina Gomel State University [2]JSC ?INTEGRAL?, 121A, Kazintsa st., Minsk, 220108, Belarus [3]Institute of Low Temperature and Structures Research PAN, Okolna st.2, Wroclaw, Poland

出　　处：《Journal of Rare Earths》2014年第3期277-281,共5页稀土学报（英文版）

摘　　要：This paper discusses the possibility of synthesis of SBTL sol-gel films for use as active layers for non-volatile memory （FRAM）. La-doped SrBi2Ta209 thin films were synthesized by sol-gel method on Pt/TiO2/BPSG/SiO2/Si substrates. The structural features of the surface （AFM）, crystallization behavior （XRD） during the heating and ferroelectric properties of synthesized films were discussed. It was shown that an optimum surface structure and a high share of perovskite phase of SBTL-films were compared to SBT-films （Theating=800 ℃）. Achieved ferroelectric parameters suggested the possibility of using synthesized SBTL sol-gel films in non-volatile memory devices.This paper discusses the possibility of synthesis of SBTL sol-gel films for use as active layers for non-volatile memory （FRAM）. La-doped SrBi2Ta209 thin films were synthesized by sol-gel method on Pt/TiO2/BPSG/SiO2/Si substrates. The structural features of the surface （AFM）, crystallization behavior （XRD） during the heating and ferroelectric properties of synthesized films were discussed. It was shown that an optimum surface structure and a high share of perovskite phase of SBTL-films were compared to SBT-films （Theating=800 ℃）. Achieved ferroelectric parameters suggested the possibility of using synthesized SBTL sol-gel films in non-volatile memory devices.

关 键 词：ferroelectric thin films sol-gel method lanthanum ion non-volatile memory rare earths 

分 类 号：TB383.2[一般工业技术—材料科学与工程]