Recent advances in development of vertical-cavity based short pulse source at 1.55 μm  

作　　者：Zhuang ZHAO Sophie BOUCHOULE Jean-Christophe HARMAND Gilles PATRIARCHE Guy AUBIN Jean-Louis OUDAR 

机构地区：[1]Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Marcoussis, France

出　　处：《Frontiers of Optoelectronics》2014年第1期1-19,共19页光电子前沿（英文版）

摘　　要：This paper reviews and discusses recent developments in passively mode-locked vertical external cavity surface emitting lasers （ML-VECSELs） for short pulse generation at 1.55 gin. After comparing ML- VECSELs to other options for short pulse generation, we reviewed the results of ML-VECSELs operating at telecommunication wavelength and point out the chal- lenges in achieving sub-picosecond operation from a ML- VECSEL at 1.55 gm. We described our recent work in the VECSELs and semiconductor saturable absorber mirrors （SESAMs）, their structure design, optimization and characterization, with the goal of moving the pulse width from picosecond to sub-picosecond.This paper reviews and discusses recent developments in passively mode-locked vertical external cavity surface emitting lasers （ML-VECSELs） for short pulse generation at 1.55 gin. After comparing ML- VECSELs to other options for short pulse generation, we reviewed the results of ML-VECSELs operating at telecommunication wavelength and point out the chal- lenges in achieving sub-picosecond operation from a ML- VECSEL at 1.55 gm. We described our recent work in the VECSELs and semiconductor saturable absorber mirrors （SESAMs）, their structure design, optimization and characterization, with the goal of moving the pulse width from picosecond to sub-picosecond.

关 键 词：semiconductor laser vertical external cavitysurface emitting laser （VECSEL） indium phosphide heatdissipation saturable absorber mirror MODE-LOCKING 

分 类 号：TN248.4[电子电信—物理电子学] TN78