Metallurgical microstructure control in metal-silicon reactions  

作　　者：TU KingNing TANG Wei 

机构地区：[1]Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon, Hong Kong [2]Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095-1595, USA

出　　处：《Science China(Technological Sciences)》2014年第3期505-519,共15页中国科学（技术科学英文版）

摘　　要：A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given.Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making current-based Si devices.Thus,the microstructure control of silicide formation on the basis of kinetics of nucleation and growth has relevant applications in microelectronic technology.Repeating events of homogeneous nucleation of epitaxial silicides of Ni and Co on Si in atomic layer reaction is presented.The chemical effort on intrinsic diffusivities in diffusion-controlled layer-typed intermetallic compound growth of Ni2Si is analyzed.

关 键 词：NUCLEATION atomic layer reaction nano-gap intermetallic compound Wagner diffusivity 

分 类 号：TN304.12[电子电信—物理电子学] TB333[一般工业技术—材料科学与工程]