Effect of Ar＋, He＋, and S＋ Irradiation on n-InP Single Crystal  

Ar^＋, He^＋，S^＋离子轰击n-InP单晶表面的机理研究

作　　者：胡靖宇[1] Waqas Mahmood 赵清[1] 

机构地区：[1]北京理工大学物理学院,北京100081

出　　处：《Chinese Journal of Chemical Physics》2014年第1期82-86,I0004,共6页化学物理学报（英文）

基　　金：ACKNOWLEDGMENTS This work was supported by the National Natural Science Foundation of China （No.11275024） and the Ministry of Science and Technology of China （No.2013YQ03059503 and No.2011AA120101）. The authors would like to thank Prof. R. W. M. Kwok from the Chinese University of Hong Kong.

摘　　要：The irradiation effects of Ar＋, He＋, and S＋ with energy from 10 eV to 180 eV on n-InP（100） surface are analyzed by X-ray photoelectron spectroscopy and low energy electron diffraction. After irradiation on the n-InP surface, damage on the surface, displacement of the Fermilevel and formation of sulfur species on S＋ exposed surface are found and studied. Successive annealing is done to suppress the surface states introduced by S＋ exposure. However, it is unsuccessful in removing the damage caused by noble ions. Besides, S＋ ions can efficiently repair the Ar＋ damaged surface, and finally form a fine 2×2 InP surface.

关 键 词：Low energy ion bombardment ANNEALING Surface damage Fermi level 

分 类 号：O6[理学—化学]