The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer  

作　　者：陆建新 欧欣 蓝学新 曹正义 刘晓杰 卢伟 龚昌杰 徐波 李爱东 夏奕东 殷江 刘治国 

机构地区：[1]National Laboratory of Solid State Microstructures, and Department of Physics, Nanjing University, Nanjing 210093 [2]National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093

出　　处：《Chinese Physics Letters》2014年第2期146-148,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grand Nos 61176124 and 11204123, and the National Basic Research Program of China under Grant No 2010CB934201.

摘　　要：A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r^magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2＋ ions around the peak of Cu1＋ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides.A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r^magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2＋ ions around the peak of Cu1＋ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides.

分 类 号：TP333[自动化与计算机技术—计算机系统结构] TN304.12[自动化与计算机技术—计算机科学与技术]