1．55μm短腔垂直腔面发射激光器的优化设计  

Optimization Design of 1.55μm Short-cavity VCSELs

作　　者：王志燕[1] 贾护军[1] 毛周[1] 李泳锦 成涛[1] 裴晓延 孙哲霖 

机构地区：[1]西安电子科技大学微电子学院、宽禁带半导体材料与器件教育部重点实验室.西安710071

出　　处：《半导体光电》2014年第1期39-42,共4页Semiconductor Optoelectronics

基　　金：国家部委基金项目(51323030306)

摘　　要：设计了一种基于InP衬底的1.55μm短腔垂直腔面发射激光器(VCSEL),先从结构上对上下反射镜进行了优化设计,然后重点对谐振腔的腔长进行了优化,采用1λ短腔结构,用Matlab软件进行了仿真,结果表明:优化后的VCSEL器件的输出功率为2.22mW,饱和松弛响应频率fR,sat为34.5GHz,最大-3dB带宽为30.5GHz,与目前此波段的最大带宽(19GHz)相比,提高了约60%。The design of the short-cavity vertical cavity surface emitting laser （VCSEL） based on InP substrate in 1. 55 μm waveband is presented. The optimizations of the top and bottom mirrors and the resonant cavity length were implemented, and then the resonant cavity length was optimized. Finally, the VCSEL with the 1λ micro-cavity structure was employed and simulated with Matlab software, and the simulation results show that the output power of the VCSEL is enhanced to 2.22 roW, the saturated relaxation response frequency fR is 34.5 GHz, and the maximum -3 dB bandwidth is 30.5 GHz, which increases by about 60% compared to the existing maximum bandwidth （19 GHz） in this waveband.

关 键 词：垂直腔面发射激光器 分布布拉格反射镜 谐振腔 -3 dB带宽 

分 类 号：TN248.4[电子电信—物理电子学]