Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer  

作　　者：温慧娟 张进成 陆小力 王之哲 哈微 葛莎莎 曹荣涛 郝跃 

机构地区：[1]State Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University

出　　处：《Chinese Physics B》2014年第3期489-492,共4页中国物理B（英文版）

基　　金：Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant Nos.2011ZX01002-002 and 2013ZX02308-002);the Fundamental Research Funds for the Central Universities of Ministry of Education of China;the National Natural Science Foundation of China(Grant Nos.61204006 and 61106063)

摘　　要：The quality of an A1GaN channel heterojunction on a sapphire substrate is massively improved by using an A1- GaN/GaN composite buffer layer. We demonstrate an A10.4Gao.6N/AI0.18Ga0.82N heterojunction with a state-of-the-art mobility of 815 cm2/（V.s） and a sheet resistance of 890Ω/口 under room temperature. The crystalline quality and the electrical properties of the A1GaN heterojunction material are analyzed by atomic force microscopy, high-resolution X-ray diffraction, and van der Pauw Hall and capacitance-voltage （C-V） measurements. The results indicate that the improved electrical properties should derive from the reduced surface roughness and low dislocation density.The quality of an A1GaN channel heterojunction on a sapphire substrate is massively improved by using an A1- GaN/GaN composite buffer layer. We demonstrate an A10.4Gao.6N/AI0.18Ga0.82N heterojunction with a state-of-the-art mobility of 815 cm2/（V.s） and a sheet resistance of 890Ω/口 under room temperature. The crystalline quality and the electrical properties of the A1GaN heterojunction material are analyzed by atomic force microscopy, high-resolution X-ray diffraction, and van der Pauw Hall and capacitance-voltage （C-V） measurements. The results indicate that the improved electrical properties should derive from the reduced surface roughness and low dislocation density.

关 键 词：AlGaN channel HETEROJUNCTION MOBILITY electrical properties 

分 类 号：O481[理学—固体物理]