Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor  

作　　者：黄达 吴俊杰 唐玉华 

机构地区：[1]State Key Laboratory of High Performance Computing, National University of Defense Technology [2]School of Computer, National University of Defense Technology

出　　处：《Chinese Physics B》2014年第3期602-607,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.60921062)

摘　　要：With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.

关 键 词：resistive RAM fault tolerance resistive switching mechanism circuit model 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]