An application of half-terrace model to surface ripening of non-bulk GaAs layers  

作　　者：刘珂 郭祥 周清 张毕禅 罗子江 丁召 

机构地区：[1]College of Electronics and Information, Guizhou University

出　　处：《Chinese Physics B》2014年第4期492-495,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.60866001);the Doctorate Foundation of the Education Ministry of China(Grant No.20105201110003)

摘　　要：In order to predict the actual quantity of non-bulk GaAs layers after long-time homoepitaxy on GaAs （001） by theo- retical calculation, a half-terrace diffusion model based on thermodynamics is used to calculate the ripening time of GaAs layers to form a fiat morphology in annealing. To verify the accuracy of the calculation, real space scanning tunneling microscopy images of GaAs surface after different annealing times are obtained and the roughness of the GaAs surface is measured. The results suggest that the half terrace model is an accurate method with a relative error of about 4.1%.In order to predict the actual quantity of non-bulk GaAs layers after long-time homoepitaxy on GaAs （001） by theo- retical calculation, a half-terrace diffusion model based on thermodynamics is used to calculate the ripening time of GaAs layers to form a fiat morphology in annealing. To verify the accuracy of the calculation, real space scanning tunneling microscopy images of GaAs surface after different annealing times are obtained and the roughness of the GaAs surface is measured. The results suggest that the half terrace model is an accurate method with a relative error of about 4.1%.

关 键 词：scanning tunneling microscopy III-V semiconductors ANNEALING diffusion in nanoscale solids 

分 类 号：O485[理学—固体物理]