Non-homogeneous SiGe-on-insulator formed by germanium condensation process  

作　　者：黄诗浩 李成 卢卫芳 王尘 林光杨 赖虹凯 陈松岩 

机构地区：[1]Department of Physics, Semiconductor Photonics Research Center, Xiamen University

出　　处：《Chinese Physics B》2014年第4期655-658,共4页中国物理B（英文版）

基　　金：Project supported by the National Key Basic Research Program of China(Grant Nos.2012CB933503 and 2013CB632103);the National Natural Science Foundation of China(Grant Nos.61176092,61036003,and 60837001);the Ph.D.Programs Foundation of Ministry of Education of China(Grant No.20110121110025);the Fundamental Research Funds for the Central Universities,China(Grant No.2010121056)

摘　　要：Ge condensation process of a sandwiched structure of Si/SiGe/Si on silicon-on-insulator （SOI） to form SiGe-on- insulator （SGOI） substrate is investigated. The non-homogeneity of SiGe on insulator is observed after a long time oxidation and annealing due to an increased consumption of silicon at the inflection points of the corrugated SiGe film morphology, which happens in the case of the rough surface morphology, with lateral Si atoms diffusing to the inflection points of the corrugated SiGe film. The transmission electron microscopy measurements show that the non-homogeneous SiGe layer exhibits a single crystalline nature with perfect atom lattice. Possible formation mechanism of the non-homogeneity SiGe layer is presented by discussing the highly nonuniform oxidation rate that is spatially dependent in the Ge condensation process. The results are of guiding significance for fabricating the SGOI by Ge condensation process.Ge condensation process of a sandwiched structure of Si/SiGe/Si on silicon-on-insulator （SOI） to form SiGe-on- insulator （SGOI） substrate is investigated. The non-homogeneity of SiGe on insulator is observed after a long time oxidation and annealing due to an increased consumption of silicon at the inflection points of the corrugated SiGe film morphology, which happens in the case of the rough surface morphology, with lateral Si atoms diffusing to the inflection points of the corrugated SiGe film. The transmission electron microscopy measurements show that the non-homogeneous SiGe layer exhibits a single crystalline nature with perfect atom lattice. Possible formation mechanism of the non-homogeneity SiGe layer is presented by discussing the highly nonuniform oxidation rate that is spatially dependent in the Ge condensation process. The results are of guiding significance for fabricating the SGOI by Ge condensation process.

关 键 词：SGOI Ge condensation non-homogeneity 

分 类 号：O469[理学—凝聚态物理]