S波段六位高精度移相器设计  

Design of the S band 6 bits high precision phase shifter

作　　者：杨小峰[1] 史江义[1] 马佩军[1] 郝跃[1] 

机构地区：[1]西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《西安电子科技大学学报》2014年第2期125-129,共5页Journal of Xidian University

基　　金：陕西省自然科学基础研究资助项目(2010JM8015)

摘　　要：采用0．25μmGaAs高电子迁移率晶体管（HEMT）7-艺设计了一款六位S波段数字移相器．移相器采用高低通和全通网络结构，运用了提高相位精度和抑制级联散射的方法．移相器在0°～360°相位范围内以5．625°步进，在2．1～2．7GHz频率范围内，最小相位均方根误差仅为1．13°．频带范围内插入损耗小于6．3dB，幅度均衡小于0．4dB，输入输出反射系数小于一10dB．A digital 6-bit phase shifter for S-band based 0.25μm GaAs HEMT technology is presented. The high-pass/low-pass network and all-pass network are utilized synthetically for the topology of the phase shifter, with both the phase precision improvement technique and the series scatter restrain technique adopted. The relative phase shift varies from 0 to 360 at the step of 5. 625°. Over the design band of 2.1 2.7 GHz, the minimum rms phase error is 1.13°, and a low insertion loss is less than 6.3 dB, of which the amplitude fluctuation is less than 0.4 dE and the input and output scatter parameter is less than -- 10 dB under all conditions.

关 键 词：高电子迁移率晶体管 数字移相器 高低通 相位精度 级联散射抑制 

分 类 号：TP391.72[自动化与计算机技术—计算机应用技术]