Backgating effect in GaAs FETs with a channel–semi-insulating substrate boundary  

作　　者：Ahmed Chaouki Megherbi Said Benramache Abderrazak Guettaf 

机构地区：[1]Electrical Engineering Department, Faculty of Technology, University of Biskra [2]Material Sciences Department, Faculty of Sciences, University of Biskra

出　　处：《Journal of Semiconductors》2014年第3期33-38,共6页半导体学报（英文版）

摘　　要：This study focuses on modeling the effects of deep hole traps, mainly the effect of the substrate（backgating effect） in a GaAs transistor MESFT. This effect is explained by the existence, at the interface, of a space charge zone. Any modulation in this area leads to response levels trapping the holes therein to the operating temperature. We subsequently developed a model treating the channel substrate interface as an N–P junction, allowing us to deduce the time dependence of the component parameters of the total resistance R ds, the pinch-off voltage V P, channel resistance, fully open R co and the parasitic series resistance R S to bind the effect trap holes H1and H0. When compared with the experimental results, the values of the R DS（t S/ model for both traps show that there is an agreement between theory and experiment; it has inferred parameter traps, namely the density and the time constant of the trap. This means that a space charge region exists at the channel–substrate interface and that the properties can be approximated to an N–P junction.This study focuses on modeling the effects of deep hole traps, mainly the effect of the substrate（backgating effect） in a GaAs transistor MESFT. This effect is explained by the existence, at the interface, of a space charge zone. Any modulation in this area leads to response levels trapping the holes therein to the operating temperature. We subsequently developed a model treating the channel substrate interface as an N–P junction, allowing us to deduce the time dependence of the component parameters of the total resistance R ds, the pinch-off voltage V P, channel resistance, fully open R co and the parasitic series resistance R S to bind the effect trap holes H1and H0. When compared with the experimental results, the values of the R DS（t S/ model for both traps show that there is an agreement between theory and experiment; it has inferred parameter traps, namely the density and the time constant of the trap. This means that a space charge region exists at the channel–substrate interface and that the properties can be approximated to an N–P junction.

关 键 词：traps pinch-off voltage resistance channel substrate interface 

分 类 号：TN386[电子电信—物理电子学] TN44