A low-cost infrared absorbing structure for an uncooled infrared detector in a standard CMOS process  

作　　者：申宁 唐祯安 余隽 黄正兴 

机构地区：[1]College of Electronic Science and Technology, Dalian University of Technology

出　　处：《Journal of Semiconductors》2014年第3期97-101,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.60806038,61131004,61274076);the National HighTechnology Research and Development Program of China(Nos.2006AA040102,2006AA040106)

摘　　要：This paper introduces a low-cost infrared absorbing structure for an uncooled infrared detector in a standard 0.5 m CMOS technology and post-CMOS process. The infrared absorbing structure can be created by etching the surface sacrificial layer after the CMOS fabrication, without any additional lithography and deposition procedures. An uncooled infrared microbolometer is fabricated with the proposed infrared absorbing structure.The microbolometer has a size of 6565 m2and a fill factor of 37.8%. The thermal conductance of the microbolometer is calculated as 1.3310 5W/K from the measured response to different heating currents. The fabricated microbolometer is irradiated by an infrared laser, which is modulated by a mechanical chopper in a frequency range of 10–800 Hz. Measurements show that the thermal time constant is 0.995 ms and the thermal mass is 1.3210 8J/K. The responsivity of the microbolometer is about 3.03104V/W at 10 Hz and the calculated detectivity is 1.4108cm Hz1=2/W.This paper introduces a low-cost infrared absorbing structure for an uncooled infrared detector in a standard 0.5 m CMOS technology and post-CMOS process. The infrared absorbing structure can be created by etching the surface sacrificial layer after the CMOS fabrication, without any additional lithography and deposition procedures. An uncooled infrared microbolometer is fabricated with the proposed infrared absorbing structure.The microbolometer has a size of 6565 m2and a fill factor of 37.8%. The thermal conductance of the microbolometer is calculated as 1.3310 5W/K from the measured response to different heating currents. The fabricated microbolometer is irradiated by an infrared laser, which is modulated by a mechanical chopper in a frequency range of 10–800 Hz. Measurements show that the thermal time constant is 0.995 ms and the thermal mass is 1.3210 8J/K. The responsivity of the microbolometer is about 3.03104V/W at 10 Hz and the calculated detectivity is 1.4108cm Hz1=2/W.

关 键 词：infrared absorbing structure CMOS infrared detectors microbolometer low-cost infrared detectors uncooled infrared detectors 

分 类 号：TN432[电子电信—微电子学与固体电子学]