Effect of guanidine hydrochloride on removal rate selectivity and wafer topography modification in barrier CMP  

作　　者：李海龙 康劲 刘玉岭 王辰伟 刘虹 高娇娇 

机构地区：[1]Institute of Microelectronics, Hebei University of Technology [2]Semiconductor Manufacturing International (Beijing) Corp [3]School of Economics and Management, Hebei University of Technology

出　　处：《Journal of Semiconductors》2014年第3期163-168,共6页半导体学报（英文版）

基　　金：Project supported by the Major National Science and Technology Special Projects(No.2009ZX02308);Tianjin Natural Science Foundation of China(No.10JCZDJC15500);the Fund Project of Hebei Provincial Department of Education,China(No.2011128)

摘　　要：We propose an alkaline barrier slurry containing guanidine hydrochloride（GH） and hydrogen peroxide.The slurry does not contain any corrosion inhibitors, such as benzotriazole（BTA）. 3-inch samples of tantalum copper and oxide were polished to observe the removal rate. The effect of GH on removal rate selectivity along withhydrogenperoxidewasinvestigatedbycomparingslurrycontainingGHandH2O2withslurrycontainingonly GH. Details about the tantalum polishing mechanism in an alkaline guanidine-based slurry and the electrochemical reactions are discussed. The results show that guanidine hydrochloride can increase the tantalum polishing rate and the selectivity of copper and barrier materials. The variation of the dishing and wire line resistance with the polishing time was measured. The dishing value after a 300 mm pattern wafer polishing suggests that the slurry has an effective performance in topography modification. The result obtained from the copper wire line resistance test reveals that the wire line in the trench has a low copper loss.We propose an alkaline barrier slurry containing guanidine hydrochloride（GH） and hydrogen peroxide.The slurry does not contain any corrosion inhibitors, such as benzotriazole（BTA）. 3-inch samples of tantalum copper and oxide were polished to observe the removal rate. The effect of GH on removal rate selectivity along withhydrogenperoxidewasinvestigatedbycomparingslurrycontainingGHandH2O2withslurrycontainingonly GH. Details about the tantalum polishing mechanism in an alkaline guanidine-based slurry and the electrochemical reactions are discussed. The results show that guanidine hydrochloride can increase the tantalum polishing rate and the selectivity of copper and barrier materials. The variation of the dishing and wire line resistance with the polishing time was measured. The dishing value after a 300 mm pattern wafer polishing suggests that the slurry has an effective performance in topography modification. The result obtained from the copper wire line resistance test reveals that the wire line in the trench has a low copper loss.

关 键 词：Guanidine hydrochloride selectivity dishing barrier layer CMP 

分 类 号：TN405[电子电信—微电子学与固体电子学]