大面积高分辨率CsI(Tl)X射线转换屏实验研究  

Experimental study on an X-ray CsI( Tl) converting screen with large format and high spatial resolution

作　　者：廖华[1] 胡昕[2] 杨勤劳[1] 王光超[1] 王云程[1] 阔晓梅[1] 

机构地区：[1]深圳大学光电子器件与系统教育部重点实验室,光电子学研究所,深圳518060 [2]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《深圳大学学报（理工版）》2014年第2期174-178,共5页Journal of Shenzhen University(Science and Engineering)

基　　金：国家高技术发展计划资助项目(2008AA8040071)~~

摘　　要：通过对X射线转换屏制备过程中,Tl+掺杂浓度、基底刻蚀、晶柱生长过程和防潮解等方面的大量实验研究,得到最佳掺杂浓度(摩尔比为0.055%)及合适的基底刻蚀深度(5μm)与工艺,实现对晶柱生长过程中表面形貌、温度、压力和转速的控制,研制出有效直径为100 mm、空间分辨率约为12lp/mm(厚度为300μm)的CsI(Tl)X射线转换屏.Aimed to obtain a CsI （ Tl） X-ray converting screen with high spatial resolution, a lot of experiments have been carried out including Tl＋ doping concentrations, etching substrates, and growing crystal columns. It is found that the mole ratio of 0. 055% and 5 μm is the best doping concentration and etching depth respectively. Also well controlled are the influence factors for the crystal column growing, such as surface features, temperatures, pressures, and speeds of rotation. The experimental evaluation has shown that a CsI （ Tl） X-ray converting screen with spatial resolution of 12 lp/mm （ the thickness of 300 μm） and active diameter of 100 mm is developed successfully.

关 键 词：数字成像 掺杂浓度 基底刻蚀 晶柱生长 空间分辨 X射线转换屏 

分 类 号：TN143[电子电信—物理电子学]