CeO_2掺杂对单畴GdBCO超导块材性能的影响  

THE EFFECT OF CeO_2 DOPING ON THE PROPERTIES OF SINGLE DOMAIN GDBCO BULK SUPERCONDUCTORS

作　　者：张龙娟[1] 杨万民[1] 杨志娟[1] 智鑫 高瑞峰[1] 

机构地区：[1]陕西师范大学物理学与信息技术学院,西安710062

出　　处：《低温物理学报》2014年第2期116-121,共6页Low Temperature Physical Letters

基　　金：教育部科学技术研究重大项目(批准号:311033);高等学校博士学科点专项科研基金(批准号:20120202110003);中央高校基本科研业务费专项资金(批准号:GK201101001;GK201305014);国家自然科学基金(批准号:50872079;51167016)资助的课题~~

摘　　要：本文采用顶部籽晶熔融织构方法(TSMTG),分别制备出了直径为17mm的掺杂和未掺杂CeO2的单畴GdBCO超导块材,其中样品中CeO2的掺杂量为1wt%,并且研究了CeO2的掺杂对样品形貌、微观结构、磁悬浮力、以及捕获磁通的影响.研究表明了CeO2的掺杂影响超导块材的生长速率,在微观形貌上,CeO2的掺杂使样品中Gd2BaCuO5(Gd211)粒子的分布更加均匀且粒度明显变小,其平均粒径约从原来未掺杂的5.49μm减小到1.32μm,并且块材中的气孔也明显减小,从而使样品的磁悬浮力从23.06N增加到31.42N,捕获磁通从0.288T增加到0.354T.In this paper, single domain GdBCO superconductors of 17 mm in diameter, with and without CeO2 ad- dition, have been successfully fabricated by the top-seeding melt texture growth process （TSMTG）. The effect of the doping of CeO2 particles on the growth morphology, the microstructure, the magnetic levitation force and trapped field properties of the single domain GdBCO bulk superconductors has been investigated. The results show that the crystal growth rate of single domain GdBCO bulk superconductors can be improved by the CeO2 addition; the size of Gd2BaCuO5 （Gd211） particles can be greatly reduced from about 5.49μm to 1.32μm by the 1wt% CeO2 addition; the porosity of the sample with 1wt% CeO2 addition is reduced obviously; the levitation force and trapped field of the sample with lwt% CeO2 addition are of 31.42N and 0. 354T, which are much higher than that （23. 06 N and 0. 288 T） of the sample without any CeO2 addition. The results are very important and helpful for further im- provement of the physical properties of GdBCO bulk superconductors.

关 键 词：单畴GdBCO超导块材 顶部籽晶熔融织构 CeO2掺杂 磁悬浮力 捕获磁通 

分 类 号：O511.3[一般工业技术—材料科学与工程]