HEMT器件小信号等效电路低温模型的提取与分析  

EXTRACTION AND ANALYSIS OF SMALL SIGNAL MODELING OF HEMT AT CRYOGENIC TEMPERATURE

作　　者：何川[1,2] 王生旺[1,2] 李斌[3] 王自力[1,2] 吴志华[1,2] 

机构地区：[1]中国电子科技集团公司第十六研究所,合肥230043 [2]中国电子科技集团公司低温电子研发中心,合肥230043 [3]中国科学院上海天文台,上海200030

出　　处：《低温物理学报》2014年第2期126-130,共5页Low Temperature Physical Letters

基　　金：国家自然科学基金(批准号:11078003)资助的课题~~

摘　　要：高电子迁移率晶体管(HEMT)的小信号等效电路模型是研制低噪声放大器与分析晶体管微波特性的基础.本文通过测量HEMT器件在低温环境下(10K、77K)直流参数与散射参数(S参数),提出了一种能够直接提取低温环境下HEMT器件小信号等效电路中各元件参数的方法,并且根据器件的I^V模型分析了低温下直流参数变化的原因.在覆盖10GHz以下频段分别提取栅长为0.15μm与0.3μm两款HEMT器件的小信号等效电路低温模型,实验显示理论计算结果与实测的S参数具有很好的吻合度.The knowledge of the small-signal equivalent circuit model of high electron mobility transistors （HEMT） is crucial for the design of low-noise amplifiers and is very useful to support the analysis of the transistor microwave performance. This paper reports the results of our experimental activity concerning the application of an improved procedure for the direct extraction of the model element values from direct current and scattering parameter measurements, and analyzed its direct current parameter at cryogenic temperatures, according to the I-V charac- teristics. This analytical procedure was tested on HEMT up to 10 GHz and at ambient temperature about 10 K and 77 K. The very good agreement between the simulated and measured S-parameters confirms the validity of the pro- posed method.

关 键 词：高电子迁移率晶体管 直流参数 小信号模型 微波特性 低温 

分 类 号：O441[理学—电磁学] TN386[理学—物理]