Ku波段0.18μm CMOS压控振荡器电路设计  

Ku-band 0.18 μm CMOS VCO circuit design

作　　者：冯海洋[1] 杜慧敏[1] 张博[1] 明远先 

机构地区：[1]西安邮电大学电子工程学院,陕西西安710161

出　　处：《电子技术应用》2014年第4期32-34,38,共4页Application of Electronic Technique

摘　　要：在TSMC 0.18μm RF CMOS工艺下设计了一个Ku波段电感电容压控振荡器,该电路采用NMOS交叉耦合型,结合滤波技术降低相位噪声,并利用开关电容阵列为其扩频,使电路获得卓越的性能。后仿真结果表明,该电路实现了10 GHz^14 GHz的宽调频,在整个频带内其相位噪声低于-112 dBc/Hz在1 MHz的偏移处;在1.8 V的电压下,核心电路工作电流为5 mA。This paper proposes a Ku-band NMOS differential cross-coupled LC VCO with the TSMC 0.18 μm RF cmos pro- cess.To lower the phase-noise, the filtering technique is used, and to widen the tuning range, the switched-capacitor array is used, which have improved the performance. Post-simulation has shown that the tuning range is from 10 GHz to 14 GHz, and the phase noise is lower than -112 dBc/Hz @1 MHz offset in the whole frequency band. The VCO core consumes 5 mA current under 1.8 V supply voltage.

关 键 词：电感电容压控振荡器 KU波段 相位噪声 

分 类 号：TN432[电子电信—微电子学与固体电子学]